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hexfet power mosfet notes through are on page 8 features and benefits applications features benefits pqfn 5x6 mm absolute maximum ratin g s parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @t c(bottom) = 25c power dissipation linear deratin g factor w/c t j operating junction and t stg storage temperature range -55 to + 150 3.6 0.83 104 max. 29 100 400 20 30 23 100 v w a c v ds 30 v r ds(on) max (@v gs = 10v) 2.5 m ? v sd max (@i s = 5.0a) t rr (typical) 19 ns i d (@t c(bottom) = 25c) 100 a 0.65 v ? synchronous mosfet for high frequency buck converters low rdson (<2.5m ? ) lower conduction losses schottky intrinsic diode with low forward voltage lower switching losses low thermal resistance to pcb (<1.2c/w) increased power density 100% rg tested increased reliability low profile (<0.9 mm) results in increased power density industry-standard pinout ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, industrial qualification increased reliability

!" note form quantity irfh5302dtrpbf pqfn 5mm x 6mm tape and reel 4000 irfh5302dtr2pbf pqfn 5mm x 6mm tape and reel 400 eol notice #259 orderable part number package type standard pack

!" s d g thermal resistance parameter typ. max. units r jc (bottom) junction-to-case ??? 1.2 r jc (top) junction-to-case ??? 15 c/w r ja junction-to-ambient ??? 35 r ja (<10s) junction-to-ambient ??? 22 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? -0.25 ??? v/c r ds(on) static drain-to-source on-resistance ??? 2.0 2.5 ??? 3.1 3.7 v gs(th) gate threshold voltage 1.35 1.80 2.35 v v ds = v gs , i d = 100a ? v gs(th) gate threshold voltage coefficient ??? -10 ??? mv/c i dss drain-to-source leakage current ??? ??? 500 a ??? ??? 5.0 ma i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 110 ??? ??? s q g total gate charge ??? 55 ??? nc q g total gate charge ??? 26 39 q gs1 pre-vth gate-to-source charge ??? 6.2 ??? q gs2 post-vth gate-to-source charge ??? 4.0 ??? q gd gate-to-drain charge ??? 7.9 ??? q godr gate charge overdrive ??? 7.9 ??? q sw switch charge (q gs2 + q gd ) ??? 11.9 ??? q oss output charge ??? 19 ??? nc r g gate resistance ??? 1.9 ??? ? t d(on) turn-on delay time ??? 16 ??? t r rise time ???30??? t d(off) turn-off delay time ??? 20 ??? t f fall time ???12??? c iss input capacitance ??? 3635 ??? c oss output capacitance ??? 680 ??? c rss reverse transfer capacitance ??? 260 ??? avalanche characteristics parameter units e as sin g le pulse avalanche ener gy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current ( bod y diode ) v sd diode forward voltage ??? ??? 0.65 v v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 19 29 ns q rr reverse recovery charge ??? 28 42 nc t on forward turn-on time time is dominated by parasitic inductance mosfet symbol na ns a pf nc v ds = 15v ??? v gs = 20v v gs = -20v ??? ??? 400 ??? ??? 100 conditions v gs = 0v, i d = 500a reference to 25c, i d = 1.0ma v gs = 10v, i d = 50a v ds = 24v, v gs = 0v v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v v gs = 10v, v ds = 15v, i d = 50a v gs = 0v v ds = 25v conditions max. 130 50 ? = 1.0mhz t j = 25c, i f = 50a, v dd = 15v di/dt = 300a/s t j = 25c, i s = 50a, v gs = 0v showing the integral reverse p-n junction diode. t j = 25c, i s = 5.0a, v gs = 0v v gs = 4.5v, i d = 50a v gs = 4.5v typ. ??? r g =1.8 ? v ds = 15v, i d = 50a v ds = 24v, v gs = 0v, t j = 125c m ? i d = 50a i d = 50a

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!" fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.3v 3.0v 2.8v bottom 2.5v 60s pulse width tj = 25c 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v 60s pulse width tj = 150c vgs top 10v 5.0v 4.5v 3.5v 3.3v 3.0v 2.8v bottom 2.5v 1 2 3 4 5 6 v gs , gate-to-source voltage (v) 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 50a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20406080 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v v ds = 6.0v i d = 50a

!" fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t c , case temperature (c) 0 20 40 60 80 100 120 140 160 i d , d r a i n c u r r e n t ( a ) limited by package -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 100a i d = 250a i d = 1.0ma i d = 1.0a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 150c single pulse 100sec 1msec 10msec dc

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!" fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
1 0.1 + - 0 5 10 15 20 v gs, gate -to -source voltage (v) 1 2 3 4 5 6 7 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 50a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 600 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 8.7a 16a bottom 50a

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!" fig 16.
for n-channel hexfet power mosfets fig 17. gate charge test circuit fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr

? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
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!" pqfn 5x6 outline "b" package details note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn 5x6 outline "b" part marking xxxx xywwx xxxxx international rectifier logo part number (?4 or 5 digits?) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) !"#$ %& ' &(())) ('# ( (# $% * '+ !"#,& ' &(())) ('# ( (# ,

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!" qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.14mh, r g = 25 ? , i as = 50a. pulse width 400s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. calculated continuous current based on maximum allowable junction temperature. package is limited to 100a by production test capability. ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes pqfn 5mm x 6mm qualification information ? moisture sensitivity level qualification level industrial ?? (per je dec jes d47f ??? guidelines ) pqfn 5x6 outline "b" tape and reel ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ re vi si on hi story date comment 3/31/2010 ? idss limits at tj 25c is changed to 500a max, vds = 24v and at tj 125c it is changed to 5.0ma max, vds = 24v. all other parameters remain unchanged. 1/6/2014 ? updated ordering information to reflect the end-of-life (eol) of the mini-reel option (eol notice #259). ? updated data sheet with the new ir corporate template.

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